GN4452P36 series GaN Internally Matched Power Amplifier is designed to meet the needs of users in standard communication and radar frequency bands. This high-power amplifier operates within the 4.4 to 5.2 GHz frequency range, ensuring excellent power and gain performance in a 50Ω system.

With its gallium nitride high electron mobility transistor (GaN HEMT), the GN4452P36 delivers unmatched performance and reliability.

This amplifier features good 50Ω impedance matching, making it easy to cascade in various applications. It is housed in a metal ceramic tube sealed package, with options for either a screw-fixed flange package or a welded pill package. These robust packaging options provide durability and reliability for high-demand environments.

• Covering the working frequency band:4.4~5.2GHz
  
• Good 50Ω impedance matching,easy to cascade
  
• Metal ceramic tube sealed package
  
• Screw-fixed flange package or welded pill package

GN4452P36 is a gallium nitride high electron mobility transistor (GaN HEMT), a high power internally matched power tube,which can work in pulse mode at saturated power, used in standard communication and radar frequency bands and provides the best power and gain performance in 50Ω system.