Diode GaN HEMT Communication chips one-stop BOM service ic supplier. GN027029P54 is a gallium nitride high electron mobility transistor (GaN HEMT), a high power internally matched power tube, which can work in pulse mode at saturated power. This chip is used in standard communication and radar frequency bands, providing the best power and gain performance in a 50Ω system.

Covering the working frequency band of 2.7~2.9GHz, the GN027029P54 offers excellent 50Ω impedance matching, making it easy to cascade. The chip features a metal ceramic tube sealed package, ensuring durability and reliability in various applications. Users can choose between a screw-fixed flange package or a welded pill package according to their needs.

As a supplier, wholesaler, and trading company, Yingda International Technology Co.,Ltd. offers these high-performance chips at competitive prices. Perfect for B2B transactions, bulk orders, and wholesale markets, these chips meet the demands of electronic component suppliers and users seeking quality and cost-effective solutions.

-    Covering the working frequency band: 2.7~2.9GHz
-    Good 50Ω impedance matching, easy to cascade
-    Metal ceramic tube sealed package
-    Screw-fixed flange package or welded pill package.